[PDF] 淺溝渠元件隔離技術現況與挑戰

Shallow trench isolation (STI), also known as box isolation technique, is an integrated circuit feature which prevents electric current leakage between ...

Abstract: In this paper, the effect of SiN pull-back process for shallow trench isolation (STI) is investigated by measuring DRAM array's refresh time ...

The polysilicon-filled shallow-trench isolation process can also achieve excellent uniformity across 6-inch diameter silicon wafers due to the high etching ...

STI = Shallow Trench Isolation. 顧名思義就是在CMOS上挖一條溝渠來做隔離，那是隔離什麼呢? 因為在CMOS上會有P+與N+結合起來的depletion region(空乏 ...

This is achieved by creating trenches between the regions and filling them with an insulating material, typically SiO2. For many ICs, there are ...

STI stands for Shallow Trench Isolation. In simple terms, it's a technique where we etch shallow trenches into the silicon wafer and fill them ...

For the isolation of neighboring MOS transistors there exist two techniques, namely Local Oxidation of Silicon and Shallow Trench Isolation.

使其成為0.25微米線幅世代以後IC製程. 中之主流關鍵技術之一。其優點包含. 可減少佔用矽晶圓表面的面積，並增. 加元件的積集度(Packing Density)，同.

STI is a process that uses trenches in the silicon substrate filled with undoped polysilicon or silicon dioxide to isolate active regions.

https://www.electrontube.co The main way we can protect against latchup is to isolate MOSFET transistors from each other.